Tsmc Standard Cell Naming Convention May 2026

<Base Function> <Drive Strength> <Threshold Voltage> <Physical Variant> <Metal/Pitch Variant> Or more concretely:

| Field | Example codes | |--------------|----------------------------------------| | Function | INV, NAND2, DFFR, AOI21 | | Drive | X0.5, X1, X2, X4, X8, X16 | | Vt | LVT, RVT, HVT, ULVT, ELVT | | Physical | _D, _P, _F, _CK, _ISO, _LS | | Track height | 6T, 7.5T, 9T (node dependent) | tsmc standard cell naming convention

| Code | Track height (metal 2 pitch) | |--------|------------------------------| | 6T | 6 tracks | | 7.5T | 7.5 tracks | | 9T | 9 tracks (high performance) | AOI21 | | Drive | X0.5

End of Paper

INVX4 drives four times stronger than INVX1 . 3.3 Threshold Voltage (Vt) TSMC offers multiple Vt options to trade leakage power vs. speed. X16 | | Vt | LVT